8
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
Zo
= 10
Ω
Zload
Zsource
f = 2060 MHz
f = 2220 MHz
f = 2060 MHz
f = 2220 MHz
VDD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 54 W Avg.
f
MHz
Zsource
Zload
2060
7.001 - j7.706
2.628 + j0.118
2080
6.859 - j7.408
2.602 + j0.415
2100
6.710 - j7.052
2.604 + j0.672
2120
6.573 - j6.707
2.566 + j0.901
2140
6.446 - j6.355
2.536 + j1.175
2160
6.339 - j5.987
2.538 + j1.411
2180
6.251 - j5.653
2.547 + j1.654
2200
6.170 - j5.272
2.533 + j1.892
2220
6.138 - j4.974
2.508 + j2.119
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
MRF6S23100HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5 MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS IC MOSFET RF N-CHAN NI-880S
MRF6S27015NR1 IC MOSFET RF N-CHAN TO270-2
MRF6S27050HSR5 IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S9045NR1 MOSFET RF N-CH 28V 10W TO-270-2
MRF6S9060NR1 MOSFET RF N-CH 28V 14W TO-270-2
相关代理商/技术参数
MRF6S23100H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HXX 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors
MRF6S23140H_V2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors